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| ZXTP03200BZ 200V PNP Low VCE(sat) transistor in SOT89 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 130m PD = 2.4W Description Packaged in the SOT89 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions C B Features * * * * 2 Amps continuous current Up to 5 Amps peak current Very low saturation voltage Enhanced switching performance E Applications * DC-DC Convertors Ordering Information Device ZXTP03200BZTA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1000 Device Marking 1N2 Issue 1 - August 2008 (c) Diodes Incorporated 2008 1 www.zetex.com www.diodes.com ZXTP03200BZ Absolute Maximum Ratings Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Peak Pulse Current Power Dissipation at TA =25C Linear Derating Factor Power Dissipation at TA =25C Linear Derating Factor Power Dissipation at TA =25C Linear Derating Factor Power Dissipation at TA =25C Linear Derating Factor Power Dissipation at TC =25C Linear Derating Factor (a) (b) (c) (d) (e) (a) Symbol VCBO VCEO VEBO IC IB ICM PD PD PD PD PD Tj, Tstg Limit -220 -200 -7 -2 -1 -5 1.1 8.8 1.8 14.4 2.4 19.2 4.46 35.7 38.7 309.6 -55 to 150 Unit V V V A A A W mW/C W mW/C W mW/C W mW/C W mW/C C Operating and Storage Temperature Range Thermal Resistance Parameter Junction to Ambient Junction to Ambient Junction to Ambient Junction to Ambient Junction to Lead NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still (b) (c) (d) (e) Symbol (a) (b) (c) (d) Value 117 68 51 28 3.23 Unit C/W C/W C/W C/W C/W RJA RJA RJA RJA RJL (e) air conditions. Mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. As (c) above measured at t<5 seconds. Junction to Lead from Collector Tab. Typical Issue 1 - August 2008 (c) Diodes Incorporated 2008 2 www.zetex.com www.diodes.com ZXTP03200BZ Thermal Characteristics Max Power Dissipation (W) 2.4 see note (c) 2.0 1.6 1.2 0.8 0.4 0.0 0 50 100 150 see note (b) see note (a) Temperature (C) Derating Curve Thermal Resistance (C/W) 100 110 T amb=25C 100 see note (a) 90 80 70 D=0.5 60 50 40 D=0.2 30 20 10 D=0.1 0 100 1m 10m 100m 1 Single Pulse T amb=25C see note (a) Maximum Power (W) 1k 10 Single Pulse D=0.05 10 100 1 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation Issue 1 - August 2008 (c) Diodes Incorporated 2008 3 www.zetex.com www.diodes.com ZXTP03200BZ Electrical Characteristics (at Tamb = 25C unless otherwise stated) Parameter Collector-Base Breakdown Voltage Symbol BVCBO Min. -220 -220 -200 -7 Typ. -245 -245 -225 -8.4 <1 <1 -37 -120 -130 -160 -940 -840 Max. Unit V V V V Conditions IC = -100A IC = -1A, RBE< 1k IC = -10mA IE = -100A VCB= -200V VCB= -200V,Tamb=100C VEB= -6V IC = -0.1A, IB = -10mA (*) IC = -0.5A, IB = -25mA (*) IC = -1A, IB = -100mA (*) IC = -2A, IB = -400mA IC = -2A, IB = -400mA IC = -2A, VCE = -5V (*) (*) (*) (*) (*) Collector-Emitter Breakdown BVCER voltage Collector-Emitter Breakdown BVCEO Voltage BVEBO Emitter-Base Breakdown Voltage ICBO Collector-Base Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage IEBO VCE(sat) -50 -0.5 -10 -50 -155 -160 -260 -1100 -1000 nA A nA mV mV mV mV mV mV Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE 100 100 20 195 170 50 5 105 31 21 18 680 75 300 IC = -10mA, VCE = -5V (*) IC = -1A, VCE = -5V (*) IC = -2A, VCE = -5V (*) IC = -5A, VCE = -5V MHz pF ns ns ns ns Transition Frequency Output Capacitance Delay Time Rise Time Storage Time Fall Time NOTES: fT Cobo td tr ts tf IC = -100mA, VCE= -10V f = 50MHz (*) VCB = -10V,f = 1MHz IC = -1A, VCC = -50V, IB1 = -IB2 = -100mA (*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. Issue 1 - August 2008 (c) Diodes Incorporated 2008 4 www.zetex.com www.diodes.com ZXTP03200BZ Typical Characteristics 1 Tamb=25C IC/IB=20 0.4 IC/IB=10 0.3 - VCE(sat) (V) 100m - VCE(sat) (V) IC/IB=10 0.2 150C 100C 0.1 -55C 25C IC/IB=5 10m 1m 10m 100m 1 0.0 10m 100m 1 - IC Collector Current (A) - IC Collector Current (A) VCE(sat) v IC 350 300 250 200 150 100 50 0 1m -55C 25C VCE=5V 150C VCE(sat) v IC Typical Gain (hFE) 1.0 0.8 0.6 IC/IB=5 25C -55C - VBE(sat) (V) 100C 150C 0.4 0.2 1m 100C 10m 100m 1 10m 100m 1 - IC Collector Current (A) - IC Collector Current (A) hFE v IC VBE(sat) v IC 700 600 f = 1MHz 1.0 0.8 0.6 0.4 VCE=5V 25C -55C Capacitance (pF) 500 400 300 Cibo - VBE(on) (V) 150C 100C 200 100 0 10m 100m 1 10 Cobo 0.2 1m 10m 100m 1 100 - IC Collector Current (A) - Voltage(V) VBE(on) v IC Capacitance v Voltage Issue 1 - August 2008 (c) Diodes Incorporated 2008 5 www.zetex.com www.diodes.com ZXTP03200BZ Intentionally left blank Issue 1 - August 2008 (c) Diodes Incorporated 2008 6 www.zetex.com www.diodes.com ZXTP03200BZ Package Information -SOT89 DIM A b b1 b2 c D Millimeters Min Max 1.40 1.60 0.38 0.48 0.53 1.50 1.80 0.28 0.44 4.40 4.60 Inches DIM Min Max 0.550 0.630 e 0.015 0.019 E 0.021 E1 0.060 0.071 G 0.011 0.017 H 0.173 0.181 - Millimeters Min Max 1.40 1.50 3.75 4.25 2.60 2.90 3.00 2.60 2.85 - Inches Min Max 0.055 0.059 0.150 0.167 0.102 0.114 0.118 0.102 0.112 - Issue 1 - August 2008 (c) Diodes Incorporated 2008 7 www.zetex.com www.diodes.com ZXTP03200BZ Definitions Product change Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user's application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Diodes Inc. with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Diodes Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated . As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Diodes Inc. terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Diodes Zetex Semiconductors Limited is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com or www.diodes.com Diodes Inc. does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. Green compliance Diodes Zetex is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: "Preview" Future device intended for production at some point. Samples may be available "Active" Product status recommended for new designs "Last time buy (LTB)" Device will be discontinued and last time buy period and delivery is in effect "Not recommended for new designs" Device is still in production to support existing designs and production "Obsolete" Production has been discontinued Datasheet status key: "Draft version" This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. "Provisional version" This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. "Issue" This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. Diodes sales offices Sales offices The Americas 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 Tel: (+1) 805 446 4800 Fax: (+1) 805 446 4850 Europe Kustermannpark Balanstrae 59, D-81541 Munchen Germany Tel: (+49) 894 549 490 Fax: (+49) 894 549 4949 Taiwan 7F, No. 50, Min Chuan Road Hsin-Tien Taipei, Taiwan Tel: (+886) 289 146 000 Fax: (+886) 289 146 639 Shanghai Rm. 606, No.1158 Changning Road Shanghai, China Tel: (+86) 215 241 4882 Fax (+86) 215 241 4891 Shenzhen Room A1103-04, ANLIAN Plaza, #4018 Jintian Road Futian CBD, Shenzhen, China Tel: (+86) 755 882 849 88 Fax: (+86) 755 882 849 99 Korea 6 Floor, Changhwa B/D, 1005-5 Yeongtong-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do, Korea 443-813 Tel: (+82) 312 731 884 Fax: (+82) 312 731 885 Issue 1 - August 2008 (c) Diodes Incorporated 2008 8 www.zetex.com www.diodes.com |
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